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Infineon BFQ790H6327XTSA1
При нажатии на кнопку с Вас спишется 1 запрос
Данные о товаре
Партийный номер товара
BFQ790H6327XTSA1
mpn (Manufacturer Part Number)
Trans RF BJT NPN 6.1V 0.6A 1500mW Automotive 4-Pin(3+Tab) SOT-89 T/R
При нажатии на кнопку с Вас спишется 1 запрос
Сводная информация
Доступность
34 820 шт.
Поставщики
3
Минимальная цена поставщиков
138,00 ₽
Курс на 25/06/2026
1 EUR = 85.18 RUB
1 USD = 74.77 RUB
1 USD = 74.77 RUB
С информацией о условиях конвертации валюты и формирования цены можно ознакомиться по ссылке
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Технические характеристики
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MOQ
Минимальный объем заказа (MOQ) - наименьшее количество, которое можно купить у поставщика
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| Arrow Electronics | 15845 | 1 |
| Rochester Electronics | 18975 | 1 |
| Farnell | По запросу | 1 |
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| 192,51 ₽ | 173,77 ₽ | 159,29 ₽ | 142,25 ₽ | 119,26 ₽ |
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MOQ
Минимальный объем заказа (MOQ) - наименьшее количество, которое можно купить у поставщика
|
1+
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500+
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Количество | Стоимость | Купить |
|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | 15845 | 1 | 1,62 ₽ | 0,00 ₽ | ||||||
| Rochester Electronics | 18975 | 1 | 2,26 ₽ | 2,04 ₽ | 1,87 ₽ | 1,67 ₽ | 1,40 ₽ | 0,00 ₽ | ||
| Farnell | По запросу | 1 | - | - | - |
Технические характеристики
Описание
Trans RF BJT NPN 6.1V 0.6A 1500mW Automotive 4-Pin(3+Tab) SOT-89 T/R
RF TRANS NPN 6.1V 1.85GHZ SOT89 / RF Transistor NPN 6.1V 300mA 1.85GHz 1.5W Surface Mount PG-SOT89
RF Power Bipolar Transistor, 1-Element, S Band, Silicon Germanium, NPN
Rf Trans, Npn, 6.1V, 0.3A, 1.5W, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:6.1V; Transition Frequency Ft:20Ghz; Power Dissipation Pd:1.5W; Dc Collector Current:300Ma; Dc Current Gain Hfe:60Hfe; Rf Transistorrohs Compliant: Yes |Infineon BFQ790H6327XTSA1
The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested to ensure the thermal properties. The device is based on Infineon's reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown, which leads to a high ruggedness against mismatch at the output. The special design of the emitter/base diode makes it robust and yields to a high maximum RF input power capability. | Summary of Features: High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and 2650 MHz Class A application circuits; High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40% collector efficiency; High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit; Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA; Single stage, intended for external matching; Exceptional ruggedness up to VSWR 10:1 at output; High maximum RF input power PRFinmax of 18 dBm; Safe operation with single 5 V supply; 100% test of proper die attach for reproducible thermal contact; 100% DC and RF tested; Easy to use large signal compact (VBIC) model available; In-house NPN SiGe technology running in very high volume; Easy to use Pb-free (RoHS compliant) and halogen-free industry standard package SOT89, low RTHJS of 35 K/W | Target Applications: High linearity driver or pre-driver in the transmit chain; 2nd or 3rd stage LNA in the receive chain; IF or LO buffer amplifier; Commercial / industrial wireless infrastructure / Base stations / Small cells; Repeaters; Automated test equipment
RF TRANS NPN 6.1V 1.85GHZ SOT89 / RF Transistor NPN 6.1V 300mA 1.85GHz 1.5W Surface Mount PG-SOT89
RF Power Bipolar Transistor, 1-Element, S Band, Silicon Germanium, NPN
Rf Trans, Npn, 6.1V, 0.3A, 1.5W, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:6.1V; Transition Frequency Ft:20Ghz; Power Dissipation Pd:1.5W; Dc Collector Current:300Ma; Dc Current Gain Hfe:60Hfe; Rf Transistorrohs Compliant: Yes |Infineon BFQ790H6327XTSA1
The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested to ensure the thermal properties. The device is based on Infineon's reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown, which leads to a high ruggedness against mismatch at the output. The special design of the emitter/base diode makes it robust and yields to a high maximum RF input power capability. | Summary of Features: High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and 2650 MHz Class A application circuits; High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40% collector efficiency; High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit; Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA; Single stage, intended for external matching; Exceptional ruggedness up to VSWR 10:1 at output; High maximum RF input power PRFinmax of 18 dBm; Safe operation with single 5 V supply; 100% test of proper die attach for reproducible thermal contact; 100% DC and RF tested; Easy to use large signal compact (VBIC) model available; In-house NPN SiGe technology running in very high volume; Easy to use Pb-free (RoHS compliant) and halogen-free industry standard package SOT89, low RTHJS of 35 K/W | Target Applications: High linearity driver or pre-driver in the transmit chain; 2nd or 3rd stage LNA in the receive chain; IF or LO buffer amplifier; Commercial / industrial wireless infrastructure / Base stations / Small cells; Repeaters; Automated test equipment
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